Novel Fabrication Device and Its Impact on Society

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Introducing a novel fabrication device with a clear objective to benefit society. The project details the process flow, schematics, required infrastructure from IITBNF, and references for further exploration.


Uploaded on Oct 04, 2024 | 0 Views


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  1. TITLE OF THE PROJECT Name & address of PI and co- PI

  2. OBJECTIVE AND INTRODUCTION Objective- How will it benefit to society Brief introduction of the fabrication device

  3. NOVELTY Clearly indicate the novelty

  4. Process Flow (Example) 1. Wafer specifications: Wafer: Si Wafer type: p-type Orientation: <100> Resistivity: 4-7 ohm-cm 2. RCA cleaning of the wafer 3. Oxidation: 20 nm thick SiO2 layer to be grown by dry oxidation furnace 4. Measurement of oxide thickness by ellipsometer 4. 100 nm thick Al layer deposition by thermal evaporation system 5. Spin coating of positive photo-resist (example: SPR 1813) 6. UV illumination of the sample in DSA through mask with dots of diameter 1mm 8. Exposed sample treated in developing solution (MF319). 7. Wet etching of Al layer by etchant solution (H3PO4:CH3COOH:HNO3:DI water = 16:1:1:2) 8. Removal of photo-resist by acetone 9. Back etching of the sample by 2% HF solution 10. 100 nm thick Al layer deposition at back of the sample by thermal evaporation system 11. FGA at 420 C for 20 min

  5. Process Flow Schematics (Example) Mention the thickness at each level for deposition Please Note : For thin film, deposition, please mention the thickness Mention the feature size, pitch dimensions at each fabrication steps of lithography Final top view of the device is also required

  6. Infrastructure required from IITBNF Mention all fabrication and the characterization tools required (Details of R&D infrastructure available at the IITBNF may be found on http://www.iitbnf.iitb.ac.in/iitbnf/index.php/infrastructure?layout=edit&id=18 ) For example : Oxidation Furnace Thermal Evaporator MJB4 lithography

  7. References (Maximum 10)

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