Virtual Power Electronics Training December 2023
Dive into the world of power electronics with a focus on IGBT design and optimization. Explore the symbols used in equations, physical constants, device structures, doping effects on breakdown voltage, and detailed IGBT design variations. Gain insights into drift region doping and breakdown voltages at different levels. This training offers a comprehensive understanding of power electronic devices and their applications.
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Presentation Transcript
Virtual Manufacturing Based Power Electronics Design and Manufacturing Training Courses Power Electronic Devices (Desing and Optimization) December, 2023
IGBT design and optimization This project is funded by IUK under grant agreement application number:10033153 This project is funded by IUK under grant agreement application number:10033153 2 2
Symbols used in Equations EBD Break Down Electric field Wd depletion layer width ni intrinsic carrier concentration ND donor concentration NA acceptor concentration ???? Break Down voltage Si dielectric constant of silicon dielectric constant of vacuum A area of the junction QF-Charge stored in drift region IF- Forward current q charge of electron ID-Channel current VG- Gate voltage VD- Drain Applied voltage S- snippiness factor This project is funded by IUK under grant agreement application number:10033153 3
Physical constants and basic relations Physical constants and basic relations This project is funded by IUK under grant agreement application number:10033153 4
Device structure from Module 3 Device structure from Module 3 Emitter /Source N+ Gate Gate Emitter oxide oxide n+ n+ p P Drift region n- n+ N- N- p+ Collector The IGBT is a combination of a power MOSFET and a vertical power BJT N+ P+ Collector/Drain This project is funded by IUK under grant agreement application number:10033153 5
Doping as a function of breakdown voltage Doping as a function of breakdown voltage GateEmitter Emitter n- p+ Collector This project is funded by IUK under grant agreement application number:10033153 6
IGBTs Design Device1 Device2 Device3 Device4 Device5 Device6 Device7 BVDS (V) 50 V 100 V 200 V 500 V 1000 V 1500 V 2000 V Drift Region Doping(1/cm^3) 9E16 6E16 3.9E16 1.85E16 1.02E16 6.95E15 5.6E15 This project is funded by IUK under grant agreement application number:10033153 7
IGBT breakdown simulation IGBT breakdown simulation This project is funded by IUK under grant agreement application number:10033153 8
On-state Voltage drop as a function of BV This project is funded by IUK under grant agreement application number:10033153 9
On On- -state voltage drop comparison state voltage drop comparison Test circuit of on-state voltage drop discussed in module4 MOSFET section in detail. This is because we are making a comparison for all devices here This project is funded by IUK under grant agreement application number:10033153 10
Schematic of Transient inductive test circuit Schematic of test circuit can be seen in Figure. Rg is connected to IGBT gate serially. I0 constant load current providing load current. Load, I0 Df Collector Rg Gate Emitter This project is funded by IUK under grant agreement application number:10033153 11
IGBT Transients Turn-On Turn-Off This project is funded by IUK under grant agreement application number:10033153 12
IGBT Transients Turn-On Turn-Off This project is funded by IUK under grant agreement application number:10033153 13
IGBT Transients Turn-Off Turn-On This project is funded by IUK under grant agreement application number:10033153 14
Transient states comparison Turn-On Turn-Off This project is funded by IUK under grant agreement application number:10033153 15
Transient states comparison Turn-On Turn-Off This project is funded by IUK under grant agreement application number:10033153 16
Transient states comparison Turn-Off Turn-On This project is funded by IUK under grant agreement application number:10033153 17
Power losses during Turn-off states kWh The instantaneous electrical power dissipation in the power electronic devices associated with the current flow through it is given by ? ? = ? ? ? ? . The energy W dissipated in the form of heat during the switching when both current and voltage are large is given by: ? = ? ? ?? = ? ? ?(?)?? ? ? This project is funded by IUK under grant agreement application number:10033153 18
Thank You! https://www.semiconductorwise.com/ https://www.semiconductorwise.com/ 2013-2023 Semiwise Limited, Company number SC465719 - VAT number 281269391 This project is funded by IUK under grant agreement application number:10033153 19
