Quaternaries in Semiconductor Nanodevice Design
next
nano
GmbH, Garching b. München, Germany
www.nextnano.com
stefan.birner@nextnano.com
How to treat Quaternaries in nextnano
2017-Dec-15
Dr. Stefan Birner, Managing Director
Material parameters needed
GaAs/AlGaAs heterostructures (
no strain
)
effective masses
(m
e
, m
hh
, m
lh
, m
so
, ...) or
k
∙
p
parameters
band gap
E
gap
, split-off energy
band offsets
(CBO, VBO)
dielectric constant (Poisson equation)
Ternaries
a.
Linear interpolation
b.
Quadratic interpolation using a
constant
bowing
parameter
c.
Interpolation using a bowing parameter which depends
on
alloy content
x
Ternary
Binaries GaAs, AlAs
Ternary Al
x
Ga
1-x
As =
x
AlAs +
(1-x)
GaAs
Bowing parameter
C
Ternaries
–
C
x
(1-x)
–
C(x)
x
(1-x)
might depend on alloy content x
Quaternary:
Al
x
Ga
1-x
As
y
P
1-y
III-III
-V-V
Quaternaries
III-III-III
-V,
III
-V-V-V
Al
x
Ga
1-x
In
1-x-y
As
III-III-III
-V
III
-V-V-V
Quaternaries
10 parameters!
Al
x
Ga
1-x
As
y
P
1-y
III-III
-V-V
Quaternaries
13 parameters!
GaAs/InGaAs heterostructures (
strain
!)
... +
lattice constant
elastic constants (2-3 parameters)
piezoelectric constant
deformation potentials (3-8 parameters)
Material parameters needed
nextnano++ software
http://www.nextnano.com/nextnanoplus/software_documentation/database/zincblende.htm
http://www.nextnano.com/nextnanoplus/software_documentation/input_file/structure.htm
PhD thesis T. Zibold
(Appendix E)
More information
http://www.nextnano.com/information/publications.php
next
nano
³ software
http://www.nextnano.com/nextnano3/input_parser/database/docu/quaternaries.htm
http://www.nextnano.com/nextnano3/tutorial/1Dtutorial_AlGaInP_onGaAs.htm
Learn about the treatment of quaternary materials in semiconductor nanodevice simulations, including material parameters needed for GaAs/AlGaAs heterostructures and interpolation techniques for ternaries. Explore the complexities of AlxGa1-xAsyP1-y and AlxGa1-xIn1-x-yAs quaternaries, along with the necessary parameters and software resources available for designing semiconductor devices.
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www.nextnano.com stefan.birner@nextnano.com 2017-Dec-15 How to treat Quaternaries in nextnano Dr. Stefan Birner, Managing Director nextnano GmbH, Garching b. M nchen, Germany Software for semiconductor nanodevices
Material parameters needed GaAs/AlGaAs heterostructures (no strain) effective masses (me, mhh, mlh, mso, ...) or k p parameters band gap Egap, split-off energy band offsets (CBO, VBO) dielectric constant (Poisson equation) Software for semiconductor nanodevices
Ternaries a. Linear interpolation b. Quadratic interpolation using a constant bowing parameter c. Interpolation using a bowing parameter which depends on alloy content x Software for semiconductor nanodevices
Ternaries Ternary Binaries GaAs, AlAs C x (1-x) Ternary AlxGa1-xAs = x AlAs + (1-x) GaAs C(x) x (1-x) Bowing parameter C might depend on alloy content x Software for semiconductor nanodevices
Quaternaries Quaternary: AlxGa1-xAsyP1-y III-III-V-V III-III-III-V, III-V-V-V Software for semiconductor nanodevices
Quaternaries AlxGa1-xIn1-x-yAs III-III-III-V III-V-V-V 10 parameters! Software for semiconductor nanodevices
Quaternaries AlxGa1-xAsyP1-y III-III-V-V 13 parameters! Software for semiconductor nanodevices
Material parameters needed GaAs/InGaAs heterostructures (strain!) ... + lattice constant elastic constants (2-3 parameters) piezoelectric constant deformation potentials (3-8 parameters) Software for semiconductor nanodevices
nextnano++ software http://www.nextnano.com/nextnanoplus/software_documentation/input_file/structure.htm http://www.nextnano.com/nextnanoplus/software_documentation/database/zincblende.htm Software for semiconductor nanodevices
More information PhD thesis T. Zibold (Appendix E) http://www.nextnano.com/information/publications.php nextnano software http://www.nextnano.com/nextnano3/input_parser/database/docu/quaternaries.htm http://www.nextnano.com/nextnano3/tutorial/1Dtutorial_AlGaInP_onGaAs.htm Software for semiconductor nanodevices
