Progress Update on Phase-2 CMS Pixel R&D Activities in Italy by Marco Meschini
R&D Pixel Phase-2
CMS INFN Activities
Update
Marco Meschini
on behalf of
Bari, Firenze, Milano B., Perugia, Pisa, Torino
CMS Tracker Week, Phase-2 pixel, Nov 2014
Pixel Sensors R&D in Italy
•
Pixel R&D with FBK Trento under INFN agreement
•
N in P sensors on 6” wafer production line
•
6”diam. ~600
m total thickness wafers
–
Three batches funded:
•
The first planar batch is a test to qualify 6” substrates, production line,
process quality. Cost shared with ATLAS-Italy, 6 Lithographic steps. Now in
production
•
The 3D batch will be launched early 2015. Cost shared with ATLAS-Italy, 11
Lithographic steps
•
Active Edge batch will follow closely, layouts should be prepared and
discussed with FBK by end of 2014. Cost relies on CMS-Italy, 10
Lithographic steps funded
–
Thinning after processing and isolation treatment have to be planned
as needed
–
Bump Bonding of single chip; explore different technologies and BB
thermal budget
–
Irradiation campaign
–
Test beams
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
2
6” Wafers
•
55 wafers Float Zone Si-Si DWB
from Icemos Tec. (UK):
–
P type
–
CZ Handle wafer, very low resistivity, 500
m thick
–
FZ Sensor wafer resistivity > 3kOhm cm
–
2 thicknesses: 100
m (25 wafers) and 130
m (30 wafers), to be used for planar,
3D, AE batches
•
Epitaxial Wafers
:
–
Extremely difficult to find 6” Epi wafers producers
–
At present only one found: Shin-Etsu (Japan). They do not sell directly to CERN, a
proxy is needed
–
Resistivity range 700-2500 Ohm cm. Possibility to get Res. >1000 Ohm cm
–
According to specs Epi layer has large thickness variations from wafer to wafer (130
± 15
m). To be checked
–
Price is in the high range
–
Japan wafer Outer Flat Length standards are different from those of EU foundries,
to be followed. Order not yet placed. Epi to be used for 3D and AE if possible
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
3
Planar Batch in Production at FBK
•
DWB 100 and 130
m wafers and Float Zone 275
m wafers
•
DWB is a new material, hence Float Zone is used as a “Reference”
–
verify performance of DWB vs FZ on standard, known pixels before going to 3D
pixel production on DWB
•
Three P_Spray isolation doses (Hi, Medium, Low) will be used on different
wafers as shown in table below
•
We have designed standard PSIdig sensors with and without P_stop
implant to study the performance and isolation
•
Production status is advanced, delivery expected by end of November
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
4
Planar Batch in Production at FBK Trento, Italy
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
5
CMS
ATLAS
FBK QA test structures
ATLAS
sensors
(FE-I4)
CMS sensors
(PSI_dig)
Wafer periphery filled
with common TS from
CMS, FBK, ATLAS
TS will be used to qualify
the process, to compare
with previous
productions made
elsewhere, to study
“simple diode” case, etc.
P_Spray process
P_Stop only where
required
Layout finalization at FBK: G. Giacomini, M. Boscardin, N. Zorzi
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
6
Pixels with P_stop
4 replicas MAPSL, KIT
Increasing number of
Guard Rings
Pixels without P_stop
The CMS Side of the Moon
Each sensor is replicated from
1 to 5 times in each wafer
Large number of sensors and TS
to be measured!
Layout in production at FBK
G. Bolla pixels
55x55um2
30x100um2
50x100um2
translated at
FBK from
N_in_N to
N_in_P
(by G.
Giacomini)
What Can you Find in This Layout?
•
32 single chip sensors suitable to be bonded to PSI46dig
•
4 MAPSL sensors for PS modules
•
5 small pitch sensors
•
7 different Guard Ring protection designs
–
4 from ATLAS from slim edge geometry studies
–
1 CMS PSI-like, not present in currently installed detector
–
1 FBK according to their technology
–
1 HPK large protection ring
–
GR’s interleaved with P_Stop rings
•
Structures to study inter-pixel capacitance down to 50x50um2
•
A large number of other Test Structures (~50) to study material
properties and to make comparisons with known pixels from other
vendors/productions
•
8 single + 1 double chip sensors for ATLAS FE-I4, just in case…
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
7
Planar Batch: 32 CMS_PSI + 5 Small Pitch test Sensors
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
8
Planar Batch: ~50 Test Structures
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
9
MaPSL Sensor
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
10
PS Module
Outer Tracker
Macro Pixel (M. Dragicevic and M. Printz) version of
June 3
rd
2014
MaPSA Light project see this week talk by D. Ceresa in
https://indico.cern.ch/event/341319/session/11/contribution/9/materi
al/slides/0.pdf
“A Displaced Sensor”
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
11
Full sensor shifted towards the cut line at right and bottom.
Two versions: 300um and 400um distance between outer GR and cut line
300um
680um
Open P_Stop Sensor
•
Pixel with opening in the P_Stop enclosure
•
No Punch Through implant structure
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
12
Bump Bonding and Related Matters
•
Bump Bonding: start a.s.a.p., provided quality checks on planar
batch are satisfactory
–
Contacts with IZM (CMS) and Selex (ATLAS)
–
BB process: exploit opportunities for low temperature during bonding and
short process time
•
Spark Isolation on planar pixels
–
BCB? Parylene? To be discussed with BB companies
•
Sensor Thinning still to be decided
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
13
Towards 3D Pixel Single Side Batch at FBK
•
Layout studies (ATLAS+CMS) already started, trying to include:
–
New pitches: 100x30, 50x50, 25x100
m
2
if possible
–
Standard PSI and FE-I4 pixels
–
New metal design to read only a few small pitch pixel with PSI (or FE-I4)
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
14
P
-
Epi layer /
P
-
High Ω•cm wafer
P
++
Low Ω•cm wafer
-V
b
Charge Amp.
Bump-bond
metal
Thin-down
Single side 3D process
p
++
col
n
++
col
Epi – SiSi DWB
100÷150µm
The base idea:
•
Single side process on Si_Si DWB
•
Ohmic columns reaching the low
resistivity substrate
•
Junction columns slightly shorter than the
active bulk
•
Reduction of hole diameter down to 5 um
•
Partial filling with poly
•
Compatible with edgeless
Work in Progress at FBK
Test on DRIE: recipe optimization
•
Nominal Hole diameter 5micron
•
On wafer hole diameter = 5.3 micron on top and on botton of hole
•
Depth 117 micron
•
Good uniformity of depth on wafer diameter
M. Boscardin
117
m
Tests ongoing
Results needed before
starting 3D single side
production
(S. Ronchin, FBK)
15
T
h
i
n
S
i
-
3
D
:
D
R
I
E
T
e
s
t
s
o
n
C
o
l
u
m
n
s
P col.
N col.
3
3
D
D
c
c
e
e
l
l
l
l
l
l
a
a
y
y
o
o
u
u
t
t
1
1
:
:
5
5
0
0
x
x
5
5
0
0
50
m
Bump
pad
50
m
15
m
50x50um2 cell
design looks
feasible
16
P col.
N col.
3
3
D
D
c
c
e
e
l
l
l
l
l
l
a
a
y
y
o
o
u
u
t
t
2
2
:
:
2
2
5
5
x
x
1
1
0
0
0
0
25
m
50
m
Bump
pad
100
m
~56
m
100x25um2
cell design
looks more
risky
17
P
P
S
S
I
I
4
4
6
6
c
c
o
o
m
m
p
p
a
a
t
t
i
i
b
b
l
l
e
e
t
t
e
e
s
s
t
t
p
p
i
i
x
x
e
e
l
l
s
s
5
5
0
0
x
x
5
5
0
0
Single cells 50x50 + grid
100um
100um
Small Pitch sensors: as of today no ROC
suitable for readout, we have to imagine
alternative solutions for testing
18
Double cells 50x100 + grid
P
P
S
S
I
I
4
4
6
6
c
c
o
o
m
m
p
p
a
a
t
t
i
i
b
b
l
l
e
e
t
t
e
e
s
s
t
t
p
p
i
i
x
x
e
e
l
l
s
s
5
5
0
0
x
x
5
5
0
0
19
P
P
S
S
I
I
4
4
6
6
c
c
o
o
m
m
p
p
a
a
t
t
i
i
b
b
l
l
e
e
t
t
e
e
s
s
t
t
p
p
i
i
x
x
e
e
l
l
s
s
2
2
5
5
x
x
1
1
0
0
0
0
Single cells 25x100 + grid
20
“Old Style” FBK Run: 3D Double Side Pixels on 6” wafer
Ready by Dec 2014
•
CMS sensors will be
mainly used for pre-
production tests for
the PPS project
(Torino)
•
BB planned together
with planar batch,
share same ROC wafers
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
21
From G.F. Dalla Betta, M. Boscardin
Double-sided process
Passing through ohmic columns
Partially-through junction columns
Columns diameters about 10
m
Temporary metal for electrical
characterization before bump-
bonding
275
m
wafer thickness
ROC Wafers and Chips
•
We joined the first Phase-1 PSIdig common order:
–
Two wafers from the first delivery of 48 ROCs (arrived at PSI)
–
Three next year
–
These 5 wafers will be used for both pixel R&D and PPS project
•
We have also ordered 2 FE-I4 wafers, no time estimates yet
•
FNAL 100x30 chip
–
Clarify how many we can get
–
Bump Bonding:
•
probably not feasible to make deposition on a full wafer
•
find a facility for single chip-single ROC BB
•
join efforts within CMS to reduce cost
•
PSI ROC4sens chip 50x50 um
–
any news?
–
BB as above
•
RD53 small prototype: if the bump pad floor-plan is defined by end of
year (or early 2015) we can include it in 3D and AE batches
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
22
Planar Active Edge Batch
•
The AE batch will follow the same philosophy of 3D for pitch and layout
•
Slim edge: try to go down to 100um
•
Most of the wafer area will be available for CMS (at present ATLAS-Italy is not
interested in planar AE, maybe some interest from foreign Institutes)
•
It is a good opportunity to submit common CMS designs
•
New ideas and innovative solution can be tried with this batch and can be
tested already in 2015
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
23
Conclusions
•
Planar batch is close to completion at FBK, wafer test should be
available by beginning of December
•
3D Double Side batch is expected to be complete before end of
year (or even sooner)
•
We are establishing plans for test and Bump Bonding
•
3D Single Side and Active Edge Batches are in the layout design
stage
•
There is a lot of wafer area in 3D and especially in AE batch: why
not start a collaboration?
•
INFN is participating in the transnational proposal AIDA-2020
–
WP7: Advanced hybrid pixel detectors
•
Detector validation for tracking devices
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
24
BACKUP
•
colonne, in generale
•
piani 3d ae tempi lunghi
•
disegni con e senza pstop
•
GR con e senza pstop
•
we’re planning BB and BCB
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
25
Altre Attività Specifiche 2015
•
Nel 2015 si prevede:
–
BB del batch 3D parzialmente in comune con ATLAS
–
BB Batch Active Edge solo CMS
–
Partner industriale BB secondo convenienza (IZM, Selex)
–
Assemblaggi moduli planari, 3D, Active Edge
–
Test Beam
–
Primi irraggiamenti planari
–
DAQ laboratorio con Digital Test Board CMS e con USBpix3 ATLAS
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
26
Open P_Stop Sensor
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
27
Open P_Stop Sensor
•
Pixel with opening in the P_Stop enclosure
•
No Punch Through implant structure
5 Nov 2014 Phase 2 Pixel Sensors meeting
Marco Meschini, INFN Firenze
28
Marco Meschini presents updates on Phase-2 CMS Pixel R&D activities in Italy. Updates include sensor production, wafer batches funded, thinning processes, bump bonding technologies, and irradiation campaigns. The meeting discusses wafer specifications, Epi wafer procurement challenges, and production progress of planar batches. Different isolation doses are applied on various wafers to study performance and isolation. Delivery of sensors is anticipated by the end of November.
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Presentation Transcript
R&D Pixel Phase-2 CMS INFN Activities Update Marco Meschini on behalf of Bari, Firenze, Milano B., Perugia, Pisa, Torino CMS Tracker Week, Phase-2 pixel, Nov 2014
Pixel Sensors R&D in Italy Pixel R&D with FBK Trento under INFN agreement N in P sensors on 6 wafer production line 6 diam. ~600 m total thickness wafers Three batches funded: The first planar batch is a test to qualify 6 substrates, production line, process quality. Cost shared with ATLAS-Italy, 6 Lithographic steps. Now in production The 3D batch will be launched early 2015. Cost shared with ATLAS-Italy, 11 Lithographic steps Active Edge batch will follow closely, layouts should be prepared and discussed with FBK by end of 2014. Cost relies on CMS-Italy, 10 Lithographic steps funded Thinning after processing and isolation treatment have to be planned as needed Bump Bonding of single chip; explore different technologies and BB thermal budget Irradiation campaign Test beams 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 2
6 Wafers 55 wafers Float Zone Si-Si DWB from Icemos Tec. (UK): P type CZ Handle wafer, very low resistivity, 500 m thick FZ Sensor wafer resistivity > 3kOhm cm 2 thicknesses: 100 m (25 wafers) and 130 m (30 wafers), to be used for planar, 3D, AE batches Epitaxial Wafers: Extremely difficult to find 6 Epi wafers producers At present only one found: Shin-Etsu (Japan). They do not sell directly to CERN, a proxy is needed Resistivity range 700-2500 Ohm cm. Possibility to get Res. >1000 Ohm cm According to specs Epi layer has large thickness variations from wafer to wafer (130 15 m). To be checked Price is in the high range Japan wafer Outer Flat Length standards are different from those of EU foundries, to be followed. Order not yet placed. Epi to be used for 3D and AE if possible 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 3
Planar Batch in Production at FBK DWB 100 and 130 m wafers and Float Zone 275 m wafers DWB is a new material, hence Float Zone is used as a Reference verify performance of DWB vs FZ on standard, known pixels before going to 3D pixel production on DWB Three P_Spray isolation doses (Hi, Medium, Low) will be used on different wafers as shown in table below We have designed standard PSIdig sensors with and without P_stop implant to study the performance and isolation Production status is advanced, delivery expected by end of November Dose p-spray Fz Si-Si 100 SI-Si 130 Low 2 (w80,w81) Medium 2 3 2 (w74,w75) (w1-w2) (w30,w33,w49) High 2 (w63,w69) 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 4
Planar Batch in Production at FBK Trento, Italy Wafer periphery filled with common TS from CMS, FBK, ATLAS FBK QA test structures CMS ATLAS TS will be used to qualify the process, to compare with previous productions made elsewhere, to study simple diode case, etc. ATLAS sensors (FE-I4) P_Spray process P_Stop only where required CMS sensors (PSI_dig) Layout finalization at FBK: G. Giacomini, M. Boscardin, N. Zorzi 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 5
4 replicas MAPSL, KIT The CMS Side of the Moon Layout in production at FBK Pixels with P_stop G. Bolla pixels 55x55um2 30x100um2 50x100um2 translated at FBK from N_in_N to N_in_P (by G. Giacomini) Each sensor is replicated from 1 to 5 times in each wafer Pixels without P_stop Increasing number of Guard Rings Large number of sensors and TS to be measured! 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 6
What Can you Find in This Layout? 32 single chip sensors suitable to be bonded to PSI46dig 4 MAPSL sensors for PS modules 5 small pitch sensors 7 different Guard Ring protection designs 4 from ATLAS from slim edge geometry studies 1 CMS PSI-like, not present in currently installed detector 1 FBK according to their technology 1 HPK large protection ring GR s interleaved with P_Stop rings Structures to study inter-pixel capacitance down to 50x50um2 A large number of other Test Structures (~50) to study material properties and to make comparisons with known pixels from other vendors/productions 8 single + 1 double chip sensors for ATLAS FE-I4, just in case 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 7
Planar Batch: 32 CMS_PSI + 5 Small Pitch test Sensors 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 8
Planar Batch: ~50 Test Structures 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 9
MaPSL Sensor 8 x 12.2 mm2 Macro Pixel (M. Dragicevic and M. Printz) version of June 3rd 2014 MaPSA Light project see this week talk by D. Ceresa in https://indico.cern.ch/event/341319/session/11/contribution/9/materi al/slides/0.pdf PS Module Outer Tracker 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 10
A Displaced Sensor Full sensor shifted towards the cut line at right and bottom. Two versions: 300um and 400um distance between outer GR and cut line 300um 680um 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 11
Open P_Stop Sensor Pixel with opening in the P_Stop enclosure No Punch Through implant structure 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 12
Bump Bonding and Related Matters Bump Bonding: start a.s.a.p., provided quality checks on planar batch are satisfactory Contacts with IZM (CMS) and Selex (ATLAS) BB process: exploit opportunities for low temperature during bonding and short process time Spark Isolation on planar pixels BCB? Parylene? To be discussed with BB companies Sensor Thinning still to be decided 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 13
Towards 3D Pixel Single Side Batch at FBK The base idea: Single side process on Si_Si DWB Ohmic columns reaching the low resistivity substrate Junction columns slightly shorter than the active bulk Reduction of hole diameter down to 5 um Partial filling with poly Compatible with edgeless Single side 3D process n++ col Bump-bond Charge Amp. Epi SiSi DWB P- Epi layer / P- High cm wafer 100 150 m P++ Low cm wafer Thin-down -Vb p++ col metal Layout studies (ATLAS+CMS) already started, trying to include: New pitches: 100x30, 50x50, 25x100 m2 if possible Standard PSI and FE-I4 pixels New metal design to read only a few small pitch pixel with PSI (or FE-I4) 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 14
Work in Progress at FBK Thin Si-3D : DRIE Tests on Columns Test on DRIE: recipe optimization Nominal Hole diameter 5micron On wafer hole diameter = 5.3 micron on top and on botton of hole Depth 117 micron Good uniformity of depth on wafer diameter Tests ongoing Results needed before starting 3D single side production 117 m (S. Ronchin, FBK) 15 M. Boscardin
INFNLogo G.-F. Dalla Betta 16 3D cell layout 1: 50 x 50 50 m 50x50um2 cell design looks feasible 50 m 15 m P col. Bump pad N col.
INFNLogo G.-F. Dalla Betta 17 3D cell layout 2: 25 x 100 100 m 100x25um2 cell design looks more risky ~56 m 25 m 50 m P col. N col. Bump pad
INFNLogo G.-F. Dalla Betta 18 PSI46 compatible test pixels 50 x 50 Small Pitch sensors: as of today no ROC suitable for readout, we have to imagine alternative solutions for testing Single cells 50x50 + grid 100um 100um
INFNLogo G.-F. Dalla Betta 19 PSI46 compatible test pixels 50 x 50 Double cells 50x100 + grid
INFNLogo G.-F. Dalla Betta PSI46 compatible test pixels 25 x 100 20 Single cells 25x100 + grid
Old Style FBK Run: 3D Double Side Pixels on 6 wafer Ready by Dec 2014 CMS sensors will be mainly used for pre- production tests for the PPS project (Torino) BB planned together with planar batch, share same ROC wafers CMS Single chip (24x) (1E, 2E, 3E, 4E) ATLAS FE-I4 (13x) CMS Quads (6x) (2E, 3E) MEDIPIX2 (4x) NA62 test chip (20x) Double-sided process Passing through ohmic columns Partially-through junction columns Columns diameters about 10 m Temporary metal for electrical characterization before bump- bonding 275 m wafer thickness From G.F. Dalla Betta, M. Boscardin 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 21
ROC Wafers and Chips We joined the first Phase-1 PSIdig common order: Two wafers from the first delivery of 48 ROCs (arrived at PSI) Three next year These 5 wafers will be used for both pixel R&D and PPS project We have also ordered 2 FE-I4 wafers, no time estimates yet FNAL 100x30 chip Clarify how many we can get Bump Bonding: probably not feasible to make deposition on a full wafer find a facility for single chip-single ROC BB join efforts within CMS to reduce cost PSI ROC4sens chip 50x50 um any news? BB as above RD53 small prototype: if the bump pad floor-plan is defined by end of year (or early 2015) we can include it in 3D and AE batches 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 22
Planar Active Edge Batch The AE batch will follow the same philosophy of 3D for pitch and layout Slim edge: try to go down to 100um Most of the wafer area will be available for CMS (at present ATLAS-Italy is not interested in planar AE, maybe some interest from foreign Institutes) It is a good opportunity to submit common CMS designs New ideas and innovative solution can be tried with this batch and can be tested already in 2015 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 23
Conclusions Planar batch is close to completion at FBK, wafer test should be available by beginning of December 3D Double Side batch is expected to be complete before end of year (or even sooner) We are establishing plans for test and Bump Bonding 3D Single Side and Active Edge Batches are in the layout design stage There is a lot of wafer area in 3D and especially in AE batch: why not start a collaboration? INFN is participating in the transnational proposal AIDA-2020 WP7: Advanced hybrid pixel detectors Detector validation for tracking devices 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 24
BACKUP colonne, in generale piani 3d ae tempi lunghi disegni con e senza pstop GR con e senza pstop we re planning BB and BCB 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 25
Altre Attivit Specifiche 2015 Nel 2015 si prevede: BB del batch 3D parzialmente in comune con ATLAS BB Batch Active Edge solo CMS Partner industriale BB secondo convenienza (IZM, Selex) Assemblaggi moduli planari, 3D, Active Edge Test Beam Primi irraggiamenti planari DAQ laboratorio con Digital Test Board CMS e con USBpix3 ATLAS 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 26
Open P_Stop Sensor 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 27
Open P_Stop Sensor Pixel with opening in the P_Stop enclosure No Punch Through implant structure 5 Nov 2014 Phase 2 Pixel Sensors meeting Marco Meschini, INFN Firenze 28
