MOSFET Measurement Experiment Overview

This experiment involves measuring pFET and nFET devices by applying voltage on drain and gate to measure drain-source current. Geometric parameters of the devices are analyzed, including width, length, and aspect ratios. Detailed measurements and comparisons are made for different types of FETs, showcasing performance characteristics such as threshold voltage, current-voltage relationships, and on/off ratios.

• MOSFET
• Measurement
• Experiment
• Geometric Parameters
• Device Performance

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1. MOSFET Measurement b10901065 b10901087 1

2. Outline Experiment Steps pFET Measurement nFET Measurement Summary Comparison 2

3. Experiment Steps Apply voltage on drain and gate, then measure the drain-source current. 3

4. Experiment Steps Apply voltage on drain and gate, then measure the drain-source current. Vs,b ground Id-Vg Vd 0.05V or 0.5V (nFET) / -0.05V or -0.5V (pFET) Vg sweep from 0 to 15 V (nFET) / -15 V (pFET) Id-Vd VOV starts from 0 to 5 V (nFET) / -5 V (pFET), every 0.5 V a step Vd sweep from 0 to 4 V (nFET) / -4 V (pFET) 4

5. Ring FET Measurement-Geometric Parameters G Ravg=268.45 0.69 m S D D G G S S D 5

6. Ring FET Measurement-Geometric Parameters G Ravg=268.45 0.69 m S D ravg=136.75 0.84 m D G G S S D 6

7. Ring FET Measurement-Geometric Parameters G Ravg=268.45 0.69 m S D W ravg=136.75 0.84 m L L=131.70 1.09 m W=1272.97 3.42 m D G G S S D W/L=9.67 0.08 7

8. Rectangular FET Measurement-Geometric Parameters G S D L=53.13 0.83 m G S D G S D 8

9. Rectangular FET Measurement-Geometric Parameters G S D L=53.13 0.83 m W=282.81 0.98 m G W/L=5.32 0.09 S D G S D 9

10. Ring pFET Measurement-Ids vs. Vgs (linear scale) Vt=x intercept of Id tangent =-1.10 V DIBL= Vt / Vds =0.98 V/V 10

11. Ring pFET Measurement-Ids vs. Vgs (log scale) ION/IOFF=3.538E3 A/A SS=dVgs/d(log(Ids)) =1035 mV/dec 11

12. Ring pFET Measurement-Ids vs. Vds 12

13. Rectangular pFET Measurement-Ids vs. Vgs (linear scale) Vt=-0.59 V DIBL=2.31 V/V 13

14. Rectangular pFET Measurement-Ids vs. Vgs (log scale) ION/IOFF=1.207E2 A/A SS=1723 mV/dec 14

15. Rectangular pFET Measurement-Ids vs. Vds 15

16. Ring nFET Measurement-Ids vs. Vgs (linear scale) Vt=1.43 V DIBL=-2.27 V/V 16

17. Ring nFET Measurement-Ids vs. Vgs (log scale) ION/IOFF=12.79 A/A SS=6098 mV/dec 17

18. Ring nFET Measurement-Ids vs. Vds 18

19. Rectangular nFET Measurement-Ids vs. Vgs (linear scale) Vt=1.71 V DIBL=-2.96 V/V 19

20. Rectangular nFET Measurement-Ids vs. Vgs (log scale) ION/IOFF=11.55 A/A SS=3674 mV/dec 20

21. Rectangular nFET Measurement-Ids vs. Vds 21

22. Summary Ring pFET Vt=-1.10 V DIBL=0.98 V/V ION/IOFF=3.538E3 A/A SS=1035 mV/dec Rectangular pFET Vt=-1.85 V DIBL=2.31 V/V ION/IOFF=1.207E2 A/A SS=1723 mV/dec Conclusion Ring pFET shows the best result. Ring nFET Vt=1.43 V DIBL=-2.27 V/V ION/IOFF=12.79 A/A SS=6098 mV/dec Rectangular nFET Vt=1.71 V DIBL=-2.96 V/V ION/IOFF=11.55 A/A SS=3674 mV/dec Vt <= 0.5 V ION ~ 1000uA/um SS ~ 60 mV/dec 22

23. Comparison D G S G S D 23

24. Comparison Conclusion Drain at outside causes larger leakage current at off-state. 24