Enhancing NAND Flash Memory Lifetime Through Data Retention Optimization

 
Data Retention in MLC NAND
Flash Memory: Characterization,
Optimization, and Recovery
 
Yu Cai, 
Yixin Luo
, Erich F. Haratsch*,
Ken Mai, Onur Mutlu
Carnegie Mellon University, *LSI Corporation
 
1
 
You Probably Know
 
•
Many use cases:
 
 
 
 
+ High performance, low energy consumption
 
2
NAND Flash Memory Challenges
– Requires erase before program (write)
– High raw bit error rate
3
CPU
Flash
Controller
Raw Flash
Memory
Chips
Limited Flash Memory Lifetime
4
Program/Erase (P/E) Cycles
(or 
Writes Per Cell)
Raw bit error rate (RBER)
 
ECC-correctable RBER
 
Newer generation
 
~3000
 
~2000
Goal: Extend flash memory lifetime
at low cost
P/E Cycle Lifetime
 
Retention Loss
 
5
 
Charge leakage over time
 
One dominant source of flash
memory errors [DATE ‘12, ICCD ‘12]
1
 
0
 
0
 
Retention
error
 
Flash cell
 
NAND Flash 101
 
6
 
Before I show you
how we extend flash lifetime …
 
 
Threshold Voltage (V
th
)
 
7
 
Normalized V
th
 
Flash cell
 
Flash cell
 
Threshold Voltage (V
th
) Distribution
 
8
 
Normalized V
th
 
Probability Density
Function (PDF)
 
Read Reference Voltage (V
ref
)
 
9
 
Normalized V
th
 
PDF
 
V
ref
Multi-Level Cell (MLC)
10
Normalized V
th
 
Erased
(11)
P1
(10)
P2
(00)
P3
(01)
PDF
 
ER-P1 V
ref
P1-P2 V
ref
P2-P3 V
ref
11
Normalized V
th
PDF
P1
(10)
P2
(00)
P3
(01)
Before retention loss:
After some retention loss:
Threshold Voltage Reduces Over Time
Fixed Read Reference Voltage Becomes Suboptimal
12
Normalized V
th
 
P1-P2 V
ref
P2-P3 V
ref
Normalized V
th
PDF
P1
(10)
P2
(00)
P3
(01)
 
Raw bit errors
Before retention loss:
After some retention loss:
 
Optimal Read Reference Voltage (OPT)
 
13
 
Normalized V
th
 
PDF
 
P1
(10)
 
P2
(00)
 
P3
(01)
 
P1-P2 V
ref
 
P2-P3 V
ref
 
P1-P2 OPT
 
P2-P3 OPT
 
Minimal raw bit errors
 
After some retention loss:
 
14
Goal 1:
 Design a low-cost mechanism that
dynamically 
finds the optimal read reference
voltage
Correctable errors
Retention Failure
15
Normalized V
th
PDF
P1
(10)
P2
(00)
P3
(01)
P1-P2 V
ref
P2-P3 V
ref
Uncorrectable errors
After some retention loss:
After 
significant 
retention loss:
 
16
Goal 1:
 Design a low-cost mechanism that
dynamically 
finds the optimal read reference
voltage
Goal 2:
 Design an offline mechanism to 
recover
data after detecting uncorrectable errors
 
17
To understand the effects of retention loss:
 - 
Characterize retention loss 
using real chips
 
18
Goal 2:
 Design an offline mechanism to recover
data after detecting uncorrectable errors
To understand the effects of retention loss:
 - 
Characterize retention loss
 using real chips
Goal 1:
 Design a low-cost mechanism that
dynamically finds the optimal read reference
voltage
 
Characterization Methodology
 
19
 
FPGA-based flash memory testing platform [Cai+,FCCM ‘11]
 
Characterization Methodology
 
•
FPGA-based flash memory testing platform
•
R
e
a
l
 
2
0
-
 
t
o
 
2
4
-
n
m
 
M
L
C
 
N
A
N
D
 
f
l
a
s
h
 
c
h
i
p
s
•
0- to 40-day worth of retention loss
•
Room temperature (20⁰C)
•
0 to 50k P/E Cycles
 
20
 
21
Characterize the effects of retention loss
1. Threshold Voltage Distribution
2. Optimal Read Reference Voltage
3. RBER and P/E Cycle Lifetime
 
1. Threshold Voltage (V
th
) Distribution
 
22
 
Normalized V
th
 
PDF
 
P1
 
P2
 
P3
 
1. Threshold Voltage (V
th
) Distribution
 
23
Finding: Cell’s threshold voltage decreases over time
 
P1
 
P2
 
P3
 
0-day
 
40-day
 
0-day
 
40-day
 
2. Optimal Read Reference Voltage (OPT)
 
24
 
P1
 
P2
 
P3
Finding: OPT decreases over time
 
0-day
OPT
 
40-day
OPT
 
0-day
OPT
 
40-day
OPT
 
3. RBER and P/E Cycle Lifetime
 
25
 
P/E Cycles
 
RBER
Actual OPT
Reading data with 7-day worth of retention loss.
3. RBER and P/E Cycle Lifetime
26
 
ECC-correctable RBER
Finding: Using actual OPT achieves the longest lifetime
V
ref
 closer to
actual OPT
 
Nominal
Lifetime
 
Extended
Lifetime
 
Characterization Summary
 
D
u
e
 
t
o
 
r
e
t
e
n
t
i
o
n
 
l
o
s
s
‐
C
e
l
l
’
s
 
t
h
r
e
s
h
o
l
d
 
v
o
l
t
a
g
e
 
(
V
t
h
)
 
d
e
c
r
e
a
s
e
s
 
o
v
e
r
 
t
i
m
e
‐
O
p
t
i
m
a
l
 
r
e
a
d
 
r
e
f
e
r
e
n
c
e
 
v
o
l
t
a
g
e
 
(
O
P
T
)
 
d
e
c
r
e
a
s
e
s
o
v
e
r
 
t
i
m
e
 
U
s
i
n
g
 
t
h
e
 
a
c
t
u
a
l
 
O
P
T
 
f
o
r
 
r
e
a
d
i
n
g
‐
A
c
h
i
e
v
e
s
 
t
h
e
 
l
o
n
g
e
s
t
 
l
i
f
e
t
i
m
e
 
27
 
28
Goal 2:
 Design an offline mechanism to recover
data after detecting uncorrectable errors
To understand the effects of retention loss:
 - Characterize retention loss using real chips
Goal 1:
 Design a low-cost mechanism that
dynamically 
finds the optimal read reference
voltage
Na
ï
ve Solution: Sweeping V
ref
 
Key idea:
 Read the data multiple times with
different read reference voltages until the raw
bit errors are correctable by ECC
 
Finds the optimal read reference voltage
 
Requires many read-retries 
  
29
Comparison of Flash Read Techniques
30
 
1. The optimal read reference voltage gradually
decreases over time
Key idea:
 Record the old OPT as a prediction (V
pred
) of
the actual OPT
Benefit:
 Close to actual OPT 
 
 read
retries
 
2. The amount of retention loss is similar across pages
within a flash block
Key idea:
 Record only one V
pred
 for each block
Benefit:
 Small storage overhead (768KB out of 512GB)
Observations
31
 
Retention Optimized Reading (ROR)
 
Components:
1. Online pre-optimization algorithm
‐
Periodically records a V
pred
 for each block
 
2. Improved read-retry technique
‐
Utilizes the recorded V
pred
 to minimize read-retry
count
 
32
1. Online Pre-Optimization Algorithm
 
•
Triggered periodically (e.g., per day)
•
Find and record an OPT as per-block V
pred
•
Performed in background
•
Small storage overhead
33
 
2. Improved Read-Retry Technique
 
•
Performed as normal read
•
V
pred
 already close to actual OPT
•
Decrease V
ref
 if V
pred
 fails, and retry
 
34
 
Normalized V
th
 
PDF
 
OPT
 
V
pred
 
Very close
 
Retention Optimized Reading: Summary
 
35
 
Nom. Life: 2.4% ↓
 
Ext. Life:   70.4% ↓
 
36
Goal 2:
 Design an offline mechanism to 
recover
data after detecting uncorrectable errors
To understand the effects of retention loss:
 - Characterize retention loss using real chips
Goal 1:
 Design a low-cost mechanism that
dynamically finds the optimal read reference
voltage
Correctable errors
Retention Failure
37
Normalized V
th
PDF
P1
(10)
P2
(00)
P3
(01)
P1-P2 V
ref
P2-P3 V
ref
Uncorrectable errors
After some retention loss:
After 
significant 
retention loss:
Leakage Speed Variation
38
Normalized V
th
PDF
S
F
low-leaking cell
ast-leaking cell
S
F
 
Initially, Right After Programming
 
39
 
Normalized V
th
 
PDF
S
F
S
F
S
F
S
F
F
F
F
F
After Some Retention Loss
40
Normalized V
th
PDF
S
F
S
F
S
F
S
F
Fast-leaking cells have lower V
th
Slow-leaking cells have higher V
th
 
Eventually: Retention Failure
 
41
 
Normalized V
th
 
PDF
S
F
S
F
S
F
S
F
 
OPT
 
Retention Failure Recovery (RFR)
 
Key idea:
 Guess original state of the cell from
its leakage speed property
 
Three steps
1.
Identify risky cells
2.
Identify fast-/slow-leaking cells
3.
Guess original states
 
42
1. Identify Risky Cells
43
Normalized V
th
PDF
S
S
F
F
OPT+
σ
OPT
OPT–
σ
Risky
cells
 
+ S =
 
+ F =
Key Formula
2. Identifying Fast- vs. Slow-Leaking Cells
44
Normalized V
th
PDF
OPT+
σ
OPT
OPT–
σ
Risky
cells
+ S =
+ F =
Key Formula
?
?
?
?
?
?
 
2. Identifying Fast- vs. Slow-Leaking Cells
 
45
 
Normalized V
th
 
PDF
 
OPT+
σ
 
OPT
 
OPT–
σ
 
Risky
cells
 
+ S =
 
+ F =
Key Formula
?
?
?
?
S
F
F
S
?
?
 
3. Guess Original States
 
46
 
Normalized V
th
 
PDF
S
F
F
S
 
Risky
cells
 
+ S =
 
+ F =
Key Formula
 
RFR Evaluation
 
•
Expect to eliminate
50% of raw bit errors
•
ECC can correct
remaining errors
 
47
 
Program with
random data
 
Detect failure,
backup data
 
Recover data
 
28 days
 
12 addt’l.
days
 
48
Goal 2:
 Design an offline mechanism to recover
data after detecting uncorrectable errors
To understand the effects of retention loss:
 - Characterize retention loss using real chips
Goal 1:
 Design a low-cost mechanism that
dynamically finds the optimal read reference
voltage
Conclusion
 
Problem:
 Retention loss reduces flash lifetime
Overall Goal:
 Extend flash lifetime at low cost
Flash Characterization:
 Developed an 
understanding
of the effects of 
retention loss 
in real chips
Retention Optimized Reading:
 A low-cost mechanism
that 
dynamically finds the optimal read reference
voltage
‐
64% lifetime
 ↑
, 70.4% read latency 
↓
Retention Failure Recovery:
 An offline mechanism
that
 recovers data after detecting uncorrectable
errors
‐
Raw bit error rate 50%
 ↓
, reduces data loss
49
 
Data Retention in MLC NAND
Flash Memory: Characterization,
Optimization, and Recovery
 
Yu Cai, 
Yixin Luo
, Erich F. Haratsch*,
Ken Mai, Onur Mutlu
Carnegie Mellon University, *LSI Corporation
 
50
 
Backup Slides
 
 
51
 
RFR Motivation
 
Data loss can happen in many ways
1.
High P/E cycle
2.
High temperature 

 

  
   
 
 
52
 
What if there are other errors?
 
Key:
 RFR does not have to correct all errors
 
Example:
•
ECC can correct 40 errors in a page
•
Corrupted page has 20 retention errors, 25
other errors (45 total errors)
•
After RFR: 10 retention errors, 30 other errors
(40 total errors 
 

)
 
53

								

								
								

										

												
Slide Note

												
Thank you for your introduction.
Good afternoon. (My name is Yixin Luo.) Today, I will present our paper “Data retention in MLC NAND flash memory: characterization, optimization, and recovery”.
This work is done with my collaborators from Carnegie Mellon University and LSI Corporation.

										

								


								
						

							
						


							

								

									
										
Embed
									
									
										
Share
									

									
									
									

								

								
							


							

							 
 							 
 							 
						  


							
							

								
Characterization, optimization, and recovery methods are explored to extend the lifespan of MLC NAND flash memory. Challenges such as high raw bit error rates and charge leakage leading to retention loss are addressed. Techniques like ECC and threshold voltage adjustment are employed to improve memory endurance and reduce errors over time.


								
    
																		
  •   Flash memory
    • 
																	
  •    Data retention
    • 
																	
  •    Optimization
    • 
																	
  •    ECC
    • 
																	
  •    Lifetime extension
    • 
																

								

								

									

										maximilian
										

											 maximilian Follow
											

										

									

									
Uploaded on Aug 14, 2024 | 0 Views

								

								


								

									
Download Presentation

									
								

								
Please find below an Image/Link to download the presentation.

								
The content on the website is provided AS IS for your information and personal use only. It may not be sold, licensed, or shared on other websites without obtaining consent from the author.
									Download presentation by click this link. If you encounter any issues during the download, it is possible that the publisher has removed the file from their server.


									
									

									


										 
										 
										 
										 

									

									

									

									

										
 E N D 

									


								
Presentation Transcript

								

								
  1. Data Retention in MLC NAND  Flash Memory: Characterization,  Optimization, and Recovery Yu Cai, Yixin Luo, Erich F. Haratsch*, Ken Mai, Onur Mutlu Carnegie Mellon University, *LSI Corporation 1
    2. 
            
            
            
  2. You Probably Know    Many use cases: + High performance, low energy consumption 2
    3. 
            
            
            
  3. NAND Flash Memory Challenges     Requires erase before program (write)     High raw bit error rate Controller Raw Flash  Memory  Chips Flash  CPU ECC Controller 3
    4. 
            
            
            
  4. Limited Flash Memory Lifetime Goal: Extend flash memory lifetime  at low cost Raw bit error rate (RBER) P/E Cycle Lifetime ECC-correctable RBER ~2000 ~3000 Program/Erase (P/E) Cycles  (or Writes Per Cell) 4
    5. 
            
            
            
  5. Retention Loss Charge leakage over time 0 0 1 Retention  error Flash cell One dominant source of flash  memory errors [DATE    12, ICCD    12] 5
    6. 
            
            
            
  6. Before I show you how we extend flash lifetime     NAND Flash 101 6
    7. 
            
            
            
  7. Threshold Voltage (Vth) Flash cell Flash cell 0 1 Normalized Vth 7
    8. 
            
            
            
  8. Threshold Voltage (Vth) Distribution Probability Density  Function (PDF) 0 1 Normalized Vth 8
    9. 
            
            
            
  9. Read Reference Voltage (Vref) PDF Vref 0 1 Normalized Vth 9
    10. 
            
            
            
  10. Multi-Level Cell (MLC) ER-P1 Vref P1-P2 Vref P2-P3 Vref PDF Erased (11) P1 (10) P2 (00) P3 (01) Normalized Vth 10
    11. 
            
            
            
  11. Threshold Voltage Reduces Over Time Before retention loss: After some retention loss: PDF P1 (10) P2 (00) P3 (01) Normalized Vth 11
    12. 
            
            
            
  12. Fixed Read Reference Voltage Becomes Suboptimal Before retention loss: After some retention loss: P2-P3 Vref P1-P2 Vref PDF P1 (10) P2 (00) P3 (01) Normalized Vth Normalized Vth Raw bit errors 12
    13. 
            
            
            
  13. Optimal Read Reference Voltage (OPT) After some retention loss: P1-P2 OPT P2-P3 OPT P2-P3 Vref P1-P2 Vref PDF P1 (10) P2 (00) P3 (01) Normalized Vth Minimal raw bit errors 13
    14. 
            
            
            
  14. Goal 1: Design a low-cost mechanism that  dynamically finds the optimal read reference  voltage 14
    15. 
            
            
            
  15. Retention Failure After some retention loss: After significant retention loss: P2-P3 Vref P1-P2 Vref PDF P1 (10) P2 (00) P3 (01) Normalized Vth Correctable errors Uncorrectable errors 15
    16. 
            
            
            
  16. Goal 1: Design a low-cost mechanism that  dynamically finds the optimal read reference  voltage Goal 2: Design an offline mechanism to recover  data after detecting uncorrectable errors 16
    17. 
            
            
            
  17. To understand the effects of retention loss:  - Characterize retention loss using real chips 17
    18. 
            
            
            
  18. To understand the effects of retention loss:  - Characterize retention loss using real chips Goal 1: Design a low-cost mechanism that  dynamically finds the optimal read reference  voltage Goal 2: Design an offline mechanism to recover  data after detecting uncorrectable errors 18
    19. 
            
            
            
  19. Characterization Methodology FPGA-based flash memory testing platform [Cai+,FCCM    11] 19
    20. 
            
            
            
  20. Characterization Methodology    FPGA-based flash memory testing platform    Real Real 20- to 24-nm MLC NAND flash chips    0- to 40-day worth of retention loss    Room temperature (20   C)    0 to 50k P/E Cycles 20
    21. 
            
            
            
  21. Characterize the effects of retention loss 1. Threshold Voltage Distribution 2. Optimal Read Reference Voltage 3. RBER and P/E Cycle Lifetime 21
    22. 
            
            
            
  22. 1. Threshold Voltage (Vth) Distribution PDF P1 P2 P3 Normalized Vth 22
    23. 
            
            
            
  23. 1. Threshold Voltage (Vth) Distribution 0-day 0-day 40-day 40-day P1 P2 P3 Finding: Cell   s threshold voltage decreases over time 23
    24. 
            
            
            
  24. 2. Optimal Read Reference Voltage (OPT) 40-day  OPT 0-day  OPT 40-day  OPT 0-day  OPT P1 P2 P3 Finding: OPT decreases over time 24
    25. 
            
            
            
  25. 3. RBER and P/E Cycle Lifetime RBER P/E Cycles 25
    26. 
            
            
            
  26. 3. RBER and P/E Cycle Lifetime Vref closer to  actual OPT Reading data with 7-day worth of retention loss. Extended  Nominal  Lifetime Lifetime Actual OPT ECC-correctable RBER Finding: Using actual OPT achieves the longest lifetime 26
    27. 
            
            
            
  27. Characterization Summary Due to retention loss retention loss    Cell   s threshold voltage  Cell   s threshold voltage (Vth) decreases over time    Optimal read reference voltage  Optimal read reference voltage (OPT) decreases  over time Using the actual OPT  actual OPT for reading    Achieves the longest lifetime lifetime 27
    28. 
            
            
            
  28. To understand the effects of retention loss:  - Characterize retention loss using real chips Goal 1: Design a low-cost mechanism that  dynamically finds the optimal read reference  voltage Goal 2: Design an offline mechanism to recover  data after detecting uncorrectable errors 28
    29. 
            
            
            
  29. Nave Solution: Sweeping Vref Key idea: Read the data multiple times with  different read reference voltages until the raw  bit errors are correctable by ECC    Finds the optimal read reference voltage    Requires many read-retries     higher read  latency 29
    30. 
            
            
            
  30. Comparison of Flash Read Techniques Flash Read  Techniques Lifetime (P/E Cycle)                 Performance (Read Latency)                 Fixed Vref Sweeping  Vref Our Goal 30
    31. 
            
            
            
  31. Observations 1. The optimal read reference voltage gradually  decreases over time Key idea: Record the old OPT as a prediction (Vpred) of  the actual OPT Benefit: Close to actual OPT     Fewer read retries 2. The amount of retention loss is similar across pages  within a flash block Key idea: Record only one Vpred for each block Benefit: Small storage overhead (768KB out of 512GB) 31
    32. 
            
            
            
  32. Retention Optimized Reading (ROR) Components: 1. Online pre-optimization algorithm    Periodically records a Vpred for each block 2. Improved read-retry technique    Utilizes the recorded Vpred to minimize read-retry  count 32
    33. 
            
            
            
  33. 1. Online Pre-Optimization Algorithm    Triggered periodically (e.g., per day)    Find and record an OPT as per-block Vpred    Performed in background    Small storage overhead New  Vpred Old  Vpred PDF Normalized Vth 33
    34. 
            
            
            
  34. 2. Improved Read-Retry Technique    Performed as normal read    Vpred already close to actual OPT    Decrease Vref if Vpred fails, and retry PDF OPT Vpred Normalized Vth Very close 34
    35. 
            
            
            
  35. Retention Optimized Reading: Summary Flash Read  Techniques Lifetime (P/E Cycle)        64%        64%     Performance (Read Latency)             _____ Ext. Life:   70.4%     Fixed Vref Sweeping  Vref Nom. Life: 2.4%     ROR 35
    36. 
            
            
            
  36. To understand the effects of retention loss:  - Characterize retention loss using real chips Goal 1: Design a low-cost mechanism that  dynamically finds the optimal read reference  voltage Goal 2: Design an offline mechanism to recover  data after detecting uncorrectable errors 36
    37. 
            
            
            
  37. Retention Failure After some retention loss: After significant retention loss: P2-P3 Vref P1-P2 Vref PDF P1 (10) P2 (00) P3 (01) Normalized Vth Correctable errors Uncorrectable errors 37
    38. 
            
            
            
  38. Leakage Speed Variation PDF low-leaking cell S S ast-leaking cell F F Normalized Vth 38
    39. 
            
            
            
  39. Initially, Right After Programming PDF P2 P3 S S F F F F S S Normalized Vth 39
    40. 
            
            
            
  40. After Some Retention Loss Fast-leaking cells have lower Vth PDF Slow-leaking cells have higher Vth P2 P3 S S F F F F F F F F S S Normalized Vth 40
    41. 
            
            
            
  41. Eventually: Retention Failure PDF OPT P2 P3 S S F F F F S S Normalized Vth 41
    42. 
            
            
            
  42. Retention Failure Recovery (RFR) Key idea: Guess original state of the cell from  its leakage speed property Three steps 1. Identify risky cells 2. Identify fast-/slow-leaking cells 3. Guess original states 42
    43. 
            
            
            
  43. 1. Identify Risky Cells OPT+   OPT      + S =  P2 Risky  cells PDF OPT + F =  Key Formula P3 S F F S Normalized Vth 43
    44. 
            
            
            
  44. 2. Identifying Fast- vs. Slow-Leaking Cells OPT+   OPT      + S =  P2 Risky  cells PDF OPT + F =  Key Formula P3 ? ? ? ? ? ? Normalized Vth 44
    45. 
            
            
            
  45. 2. Identifying Fast- vs. Slow-Leaking Cells OPT+   OPT      + S =  P2 Risky  cells PDF OPT + F =  Key Formula P3 ? S ? ? F ? ? F ? S Normalized Vth 45
    46. 
            
            
            
  46. 3. Guess Original States + S =  P2 Risky  cells PDF + F =  Key Formula P3 S F F S Normalized Vth 46
    47. 
            
            
            
  47. RFR Evaluation    Expect to eliminate  50% of raw bit errors    ECC can correct  remaining errors Program with  random data 28 days Detect failure,  backup data 12 addt   l.  days Recover data 47
    48. 
            
            
            
  48. To understand the effects of retention loss:  - Characterize retention loss using real chips Goal 1: Design a low-cost mechanism that  dynamically finds the optimal read reference  voltage Goal 2: Design an offline mechanism to recover  data after detecting uncorrectable errors 48
    49. 
            
            
            
  49. Conclusion Problem: Retention loss reduces flash lifetime Overall Goal: Extend flash lifetime at low cost Flash Characterization: Developed an understanding  of the effects of retention loss in real chips Retention Optimized Reading: A low-cost mechanism  that dynamically finds the optimal read reference  voltage    64% lifetime    , 70.4% read latency     Retention Failure Recovery: An offline mechanism  that recovers data after detecting uncorrectable  errors    Raw bit error rate 50%    , reduces data loss 49
    50. 
            
            
            
  50. Data Retention in MLC NAND  Flash Memory: Characterization,  Optimization, and Recovery Yu Cai, Yixin Luo, Erich F. Haratsch*, Ken Mai, Onur Mutlu Carnegie Mellon University, *LSI Corporation 50
    51. 
            
            
            
							

							

					

					
					
					

						
Related

						

						


							
							
							
							

						

							

									

      

        
          

            

              Buy 32GB Flash Drive by Wholesale USB for Sale
            

            

              
Buy 32GB Flash Drive by Wholesale USB for Sale

              
Wholesale

            

          

        
      


     

      

        
          

            

              Memory Allocation in Operating Systems
            

            

              
Memory Allocation in Operating Systems

              
mae

            

          

        
      


     

      

        
          

            

              Memory Organization in Computers
            

            

              
Memory Organization in Computers

              
capri

            

          

        
      


     

      

        
          

            

              Memory Organization in Computers
            

            

              
Memory Organization in Computers

              
manisa

            

          

        
      


     

      

        
          

            

              Cache and Virtual Memory in Computer Systems
            

            

              
Cache and Virtual Memory in Computer Systems

              
katy

            

          

        
      


     

      

        
          

            

              Introduction to Flash: Basics and Editions
            

            

              
Introduction to Flash: Basics and Editions

              
yunus

            

          

        
      


     

      

        
          

            

              Experimental Lightning Flash Prediction Report
            

            

              
Experimental Lightning Flash Prediction Report

              
simba

            

          

        
      


     

      

        
          

            

              Memory Management and Swapping Techniques
            

            

              
Memory Management and Swapping Techniques

              
alijah

            

          

        
      


     

      

        
          

            

              Enhancing Memory and Concentration Techniques for Academic Success
            

            

              
Enhancing Memory and Concentration Techniques for Academic Success

              
luz_gi

            

          

        
      


     

      

        
          

            

              Memory Encoding and Retention Processes
            

            

              
Memory Encoding and Retention Processes

              
maey813

            

          

        
      


     

      

        
          

            

              BIOS Flash and System Management Mode Internals
            

            

              
BIOS Flash and System Management Mode Internals

              
emon_743

            

          

        
      


     

      

        
          

            

              Your Memory System: A Guide to Enhancing Recall
            

            

              
Your Memory System: A Guide to Enhancing Recall

              
atl_wen

            

          

        
      


     

      

        
          

            

              Enhancing Memory Security with H2ORAM and Secure Memory Techniques
            

            

              
Enhancing Memory Security with H2ORAM and Secure Memory Techniques

              
larimore_l

            

          

        
      


     

      

        
          

            

              Enhancing NAND Flash Memory Chip-Off Forensic Analysis Reliability
            

            

              
Enhancing NAND Flash Memory Chip-Off Forensic Analysis Reliability

              
phi_gan

            

          

        
      


     

      

        
          

            

              Flash Chips: Storage on NAND-Flash Devices
            

            

              
Flash Chips: Storage on NAND-Flash Devices

              
bdoy

            

          

        
      


     

      

        
          

            

              Optimizing Inference Time by Utilizing External Memory on STM32Cube for AI Applications
            

            

              
Optimizing Inference Time by Utilizing External Memory on STM32Cube for AI Applications

              
naih_86

            

          

        
      


     

      

        
          

            

              Efficient Buffer Replacement Algorithms for NAND Flash Storage Devices
            

            

              
Efficient Buffer Replacement Algorithms for NAND Flash Storage Devices

              
lcha

            

          

        
      


     

      

        
          

            

              F2FS: A File System for Flash Storage
            

            

              
F2FS: A File System for Flash Storage

              
breto

            

          

        
      


     

      

        
          

            

              Shared Memory, Distributed Memory, and Hybrid Distributed-Shared Memory
            

            

              
Shared Memory, Distributed Memory, and Hybrid Distributed-Shared Memory

              
benjami

            

          

        
      


     

      

        
          

            

              Virtual Memory Concepts and Benefits
            

            

              
Virtual Memory Concepts and Benefits

              
kyde410

            

          

        
      


     

      

        
          

            

              Virtual Memory and its Implementation
            

            

              
Virtual Memory and its Implementation

              
tian836

            

          

        
      


     

      

        
          

            

              Effective Email Management and Records Retention Guidelines
            

            

              
Effective Email Management and Records Retention Guidelines

              
begg_a

            

          

        
      


     							

						

					

					

				


				

			

		
		

			

				
				

					
More Related Content

					

						

														

					

				

				
			

		












 





  
  
  



giItT1WQy@!-/#giItT1WQy@!-/#giItT1WQy@!-/#giItT1WQy@!-/#giItT1WQy@!-/#giItT1WQy@!-/#giItT1WQy@!-/#giItT1WQy@!-/#giItT1WQy@!-/#giItT1WQy@!-/#