Next-Generation Photomasks in Extreme Ultraviolet Lithography Symposium
Explore the latest advancements in actinic mask imaging and semiconductor high-NA reticle technology presented at the 2015 International Symposium on Extreme Ultraviolet Lithography in Maastricht. Topics include zoneplate lenses, phase reconstruction algorithms, Fourier Ptychography microscopy, and more, providing insights into cutting-edge techniques for enhancing lithography processes.
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ACTINIC MASK IMAGING: TAKING A SHARP LOOK AT NEXT GENERATION PHOTOMASKS Semiconductor High-NA actinic Reticle Review Project Markus Benk, Antoine Wojdyla, Ken Goldberg, Patrick Naulleau 2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, the Netherlands, October 6
2 2015 EUVL Symposium, Maastricht Overview Source: Synchrotron Optics: Zoneplate lenses 4 NA: 0.25 0.625 Sigma: Programmable Navigation: Full-mask XY Throughput: ~8 series/hour
3 2015 EUVL Symposium, Maastricht Introduction 500 nm Mask SEM Wafer SEM SHARP aerial image Mangat, PMJ 2015
4 2015 EUVL Symposium, Maastricht Introduction Complementary imaging modes 1 m Results Bright field image Zernike Phase Contrast
5 2015 EUVL Symposium, Maastricht Introduction Phase reconstruction, modified Gerchberg-Saxton Algorithm Through-focus, z= 400 nm Complex amplitude 200 nm Through-focus, z=400 nm Complex amplitude Mochi, SPIE 79691X (2011)
6 2015 EUVL Symposium, Maastricht Introduction Fourier Ptychography Microscopy 1 m synthesized NA Pupil plane Complex amplitude
7 2015 EUVL Symposium, Maastricht Introduction Source angular spectrum Aperture
7 2015 EUVL Symposium, Maastricht Introduction Fourier Synthesis Illuminator Zoneplate lens
8 2015 EUVL Symposium, Maastricht Fourier Synthesis Illuminator Illuminator angular range = outline 0.625 4xNA 10 CRA =0.8
9 2015 EUVL Symposium, Maastricht Fourier Synthesis Illuminator ASML Flex Pupil 7 standard fills Freeform source Liu, SPIE 90480Q (2014) Meiling, SPIE 83221G (2012)
10 2015 EUVL Symposium, Maastricht Fourier Synthesis Illuminator Pupil fill Conventional 0.33 4xNA, 6 CRA Pupil diagram YAG image, 4mm below focus
10 2015 EUVL Symposium, Maastricht Fourier Synthesis Illuminator Pupil fill Crosspole 0.33 4xNA, 6 CRA Pupil diagram YAG image, 4mm below focus
10 2015 EUVL Symposium, Maastricht Fourier Synthesis Illuminator Pupil fill Crosspole 0.33 4xNA, 6 CRA Pupil diagram Modulation of flux in pupil channels
10 2015 EUVL Symposium, Maastricht Fourier Synthesis Illuminator Pupil fill Quasar 0.33 4xNA, 6 CRA Pupil diagram Modulation of flux in pupil channels
10 2015 EUVL Symposium, Maastricht Fourier Synthesis Illuminator Pupil fill Freeform Source 0.33 4xNA, 6 CRA Pupil diagram Freeform-source example
5 2013 EUVL Symposium, Toyama, Japan SHARP Zoneplates Gold pattern on Si-membranes Magnetic mounting Kinematic positioning Kinematic positioning Gold pattern on Si-membranes Magnetic mounting 5 mm 2 mm
12 2015 EUVL Symposium, Maastricht SHARP Zoneplates Chip A Standard Zoneplates: 0.25 to 0.625 4xNA 6 to 10 CRA 5 azimuthal angles 160 m Chip B Zernike Phase Contrast Differential Interference Contrast Stereoscopic imaging Cubic Phase Modulation
12 2015 EUVL Symposium, Maastricht SHARP Zoneplates Chip A Standard Zoneplates: 0.25 to 0.625 4xNA 6 to 10 CRA 5 azimuthal angles 160 m Chip B Zernike Phase Contrast Differential Interference Contrast Stereoscopic imaging Cubic Phase Modulation Chip C Elliptical zoneplates
13 2015 EUVL Symposium, Maastricht SHARP Ken s data Goldberg, SPIE 94221A (2015)
14 2015 EUVL Symposium, Maastricht Resolution Test Target MET3 Berkeley Microfield Exposure Tool 0.3 NA Photoresist Inpria YA-Series Resist Negative-tone 50-nm absorption length 30-nm thick resist on Si-wafer coated with a standard Mo/Si-multilayer 30% EUV-transmission on double pass
15 2015 EUVL Symposium, Maastricht Resolution Test Target SEM image 22-nm hp lines
16 2015 EUVL Symposium, Maastricht Resolution Test Target Resolution Limits dipole extreme dipole rD=0.5l coherent rc=l rC= Rayleigh rR=0.61l Illumination coherent incoherent rl=0.5l zoneplate Resolution limit (full cycle) l rR=0.61l NA NA NA NA NA NA pitch hp 0.125 NA (0.5 NA scanner) 108 54 54 nm 66 33 33 nm 54 27 27 nm (hp) 108 nm 66 nm 54 nm (pitch) 0.5 4xNA 87 nm 53 nm 44 nm (pitch) 87 44 44 nm 53 26 0.156 NA (0.625 NA scanner) 44 22 22 nm (hp) pitch hp 0.625 4xNA 26 nm
17 2015 EUVL Symposium, Maastricht Results 2 m 0.5 4xNA Coherent illumination 100-nm hp lines
17 2015 EUVL Symposium, Maastricht Results Vertical Lines 2 m 0.5 4xNA Coherent illumination 100-nm hp lines
18 2015 EUVL Symposium, Maastricht Results 300 nm 0.5 4xNA Coherent illumination rC=54 nm hp 100-nm hp v lines 83% modulation CD
18 2015 EUVL Symposium, Maastricht Results 300 nm 0.5 4xNA Coherent illumination rC=54 nm hp 60-nm hp v lines 68% modulation CD
18 2015 EUVL Symposium, Maastricht Results 300 nm 0.5 4xNA Coherent illumination rC=54 nm hp 50-nm hp v lines No modulation CD
18 2015 EUVL Symposium, Maastricht Results 300 nm 0.5 4xNA Incoherent illumination rR=33 nm hp 50-nm hp v lines 20% modulation CD
18 2015 EUVL Symposium, Maastricht Results 300 nm 0.5 4xNA Incoherent illumination rR=33 nm hp 36-nm hp v lines 5% modulation CD
18 2015 EUVL Symposium, Maastricht Results 300 nm 0.5 4xNA Incoherent illumination rR=33 nm hp 34-nm hp v lines 4% modulation CD
18 2015 EUVL Symposium, Maastricht Results 300 nm 0.5 4xNA Extreme dipole rD=27 nm hp 34-nm hp v lines 27% modulation CD
18 2015 EUVL Symposium, Maastricht Results 300 nm 0.5 4xNA Extreme dipole rD=27 nm hp 28-nm hp v lines 14% modulation CD
19 2015 EUVL Symposium, Maastricht Results 200 nm 0.625 4xNA Coherent illumination rC=44 nm hp 100-nm hp v lines 83% modulation CD
19 2015 EUVL Symposium, Maastricht Results 200 nm 0.625 4xNA Coherent illumination rC=44 nm hp 50-nm hp v lines 56% modulation CD
19 2015 EUVL Symposium, Maastricht Results 200 nm 0.625 4xNA Coherent illumination rC=44 nm hp 40-nm hp v lines No modulation CD
19 2015 EUVL Symposium, Maastricht Results 200 nm 0.625 4xNA Incoherent illumination rR=26 nm hp 40-nm hp v lines 18% modulation CD
19 2015 EUVL Symposium, Maastricht Results 200 nm 0.625 4xNA Incoherent illumination rR=26 nm hp 28-nm hp v lines 3% modulation CD
19 2015 EUVL Symposium, Maastricht Results 200 nm 0.625 4xNA Incoherent illumination rR=26 nm hp 26-nm hp v lines 2% modulation CD
19 2015 EUVL Symposium, Maastricht Results 200 nm 0.625 4xNA Extreme dipole rL=22 nm hp 26-nm hp v lines 33% modulation CD
19 2015 EUVL Symposium, Maastricht Results 200 nm 0.625 4xNA Extreme dipole rL=22 nm hp 24-nm hp v lines 25% modulation CD
19 2015 EUVL Symposium, Maastricht Results 200 nm 0.625 4xNA Extreme dipole rL=22 nm hp 22-nm hp v lines 10% modulation CD
20 2015 EUVL Symposium, Maastricht Emulation of anamorphic imaging Source angular spectrum Aperture
20 2015 EUVL Symposium, Maastricht Emulation of anamorphic imaging Emulation of anamorphic imaging
21 2015 EUVL Symposium, Maastricht Zoneplate lenses Emulation of anamorphic imaging SEM image Elliptical zoneplates 4x/8xNA = 0.55 6 CRA Magnification from 1250 to 1636
22 2015 EUVL Symposium, Maastricht Imaging results Emulation of anamorphic imaging
22 2015 EUVL Symposium, Maastricht Imaging results Emulation of anamorphic imaging
22 2015 EUVL Symposium, Maastricht Imaging results Emulation of anamorphic imaging
22 2015 EUVL Symposium, Maastricht Imaging results Emulation of anamorphic imaging
22 2015 EUVL Symposium, Maastricht Imaging results Emulation of anamorphic imaging
22 2015 EUVL Symposium, Maastricht Imaging results Emulation of anamorphic imaging
