NVMTS 2023 Program Schedule
Explore the detailed agenda of the NVMTS 2023 conference featuring sessions on neuromorphic memory, new memory concepts, ferroelectric memory, MRAM, FLASH, RRAM/CBRAM, and more. Leading experts will present on cutting-edge research and developments in memory technologies over two days.
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Day 1 (Wednesday, 30thAugust) 7:30-8:30 AM Registration Opening 8:30-8:45 Keynote: Gouri Sankar (imec), TBD 8:45-9:25 Session 1: Neuromorphic memory 1 Joshua Yang (University of Southern California), TBD 9:25-9:50 Damien Querlioz (Universit Paris-Saclay), Tackling Unpredictability in Emerging Memory Devices: the Bayesian Approach 9:50-10:15 Break 10:15-10:40 Session 2: New memory concepts Hyunsang Hwang (Pohang University of Science and Technology), Te-based binary OTS selector devices 10:40-11:05 Sonu Devi (National University of Singapore), Ferroelectric Oxide-ITO/IGZO Heterojunction for Memtransistor with Record Performance by Channel Defect Self-Compensation Effect 11:05-11:30 Subhali Subhechha (imec), TBD 11:30-11:55 Taras Ravsher (imec), Exploiting polarity effect in amorphous chalcogenides for self-selecting memory applications 11:55-12:20 Lunch 12:30-1:30 PM Session 3: Ferroelectric Memory 1 Asif Khan (Georgia Institute of Technology), TBD 1:30-1:55 Jan Van Houdt (imec), TBD 1:55-2:20 Michael Hoffmann (UC Berkeley), FeFET device design for ultra-low voltage operation and high endurance 2:20-2:45 Yan Cheng (East China Normal University), Atomic-level observation of Hf0.5Zr0.5O2thin film 2:45-3:10 Lorenzo Benatti (Universit di Modena e Reggio Emilia), The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging 3:10-3:35 Break 3:35-4:00 Session 4: MRAM Jeong-Heon Park (Samsung), Advanced STT-MRAM with higher reliability enabled by controlled magnetic domain wall pinning 4:00-4:25 Siddharth Rao (imec), TBD 4:25-4:50 Raffaele De Rose (University of Calabria), TBD 4:50-5:15 Poster session 5:30-7:30
Day 2 (Thursday, 31stAugust) 7:30-8:30 AM Registration Keynote: TBD 8:45-9:25 Session 5: FLASH Biswajit Ray (University of Alabama in Huntsville), TBD 9:25-9:50 Cristian Zambelli (Universit degli Studi di Ferrara), Mitigating Cross-temperature effects in 3D NAND Flash 9:50-10:15 Break 10:15-10:40 Session 6: Ferroelectric Memory 2 Laurent Grenouillet (CEA-Leti), Hf(Zr)O2-based FeRAM scalability to nodes below 130 nm: material, integration and design challenges 10:40-11:05 Konrad Seidel (Fraunhofer Institute for Photonic Microsystems IPMS), Switching Performance Optimization of 1T-1C FeFET 11:05-11:30 Jianguo Yang (Institute of Microelectronics of the Chinese Academy of Sciences), A 9 Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7 ns Read/Write using Temperature-Track Write Driver and Offset-Canceled Sense Amplifier 11:30-11:55 Lunch 12:00-1:00 PM Session 7: Neuromorphic memory 2 John Paul Strachan (Peter Gr nberg Institute), TBD 1:00-1:25 Qing Cao (University of Illinois Urbana-Champaign), Electrochemical Transistor Array for Deep Learning Accelerators 1:25-1:45 Yuchao Yang (Peking University), TBD 1:45-2:10 Laura Begon-Lours (IBM), Ferroelectric Synapses for Neuromorphic Circuits: BiFeO3 and HfZrO4 Non-Volatile Memories in Passive Crossbars 2:10-2:35 Break 2:35-3:00 Session 8: RRAM/CBRAM Gabriel Molas (Weebit Nano), ReRAM Gets Real The Path from Concept to Market 3:00-3:25 Felix Tengler (Infineon), Automotive grade reliability for 28nm RRAM Data Memory 3:25-3:50 Stephan Menzel (Peter Gr nberg Institute), Spatio-Temporal Correlations in Memristive Arrays of Valence Change Memory Cells 3:50-4:15 Huaqiang Wu (Tsinghua University), TBD 4:15-4:40 Poster session 5:00-7:00 Dinner
Day 3 (Friday, 1stSeptember) Session 9: Neuromorphic memory 3 Yang Chai (Hong Kong Polytechnic University), TBD 9:00-9:25 Beatriz Noheda (University of Groningen), TBD 9:25-9:50 Panagiotis Dimitrakis (NCSR Demokritos), TBD 9:50-10:15 Break 10:15-10:40 Session 10: PCM Luca Laurin (ST Microelectronics), On the Retention Physics of Ge-rich GST ePCM technology 10:40-11:05 Matthias Wuttig (RWTH Aachen University), Tailoring the Switching in Phase Change Materials: The Role of Chemical Bonding 11:05-11:30 Manuel Le Gallo (1BM), Deep neural network inference with a 64-core in-memory compute chip based on phase-change memory 11:30-11:55 Award Ceremony and Closing Remark 12:00-12:30 Lunch 12:30-1:30 PM Poster Session 1:30 3:00 PM
