Understanding MOS Transistor Operation Regions and Amplifier Design Principles

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Learn about the different operation regions of MOS transistors, including saturation, ohmic, and subthreshold, as well as the design principles for single-stage amplifiers. Explore the effects of Vsb on transistor behavior and basic design exercises for analog circuits.

  • Transistor Operation
  • Amplifier Design
  • MOS Transistors
  • Analog Circuits
  • Transistor Modeling

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  1. INEL 5265 Review I 3/18/2025 Last Lecture MOS Transistor Review (Chap. #3) Transistor Operation Regions & Large Signal Behavior saturation - Vds>Vds(sat) ohmic - Vds<Vds(sat) subthreshold - Vds> 0.2V Small Signal Model low-frequency model frequency dependent model (parasitic capacitances) Single Stage Amplifiers voltage gain terminal impedances Vsb effect! Basic Design Exercises 1 Analog Circuit Design

  2. INEL 5265 Review I 3/18/2025 Single Stage Amplifiers 2 Analog Circuit Design

  3. INEL 5265 Review I 3/18/2025 Single Flow in Transistors It is important to recognize that ac signals can only flow into and out of certain transistor terminals. Rules: The drain can never be an input terminal. The gate can never be an output terminal. 3 Analog Circuit Design

  4. INEL 5265 Review I 3/18/2025 Transistor Design #1 Design the transistor s W/L such that it operates in the saturation region for ID=10 A C W ( ) 2 n OX = I V V DS GS T 2 L W ( )2 A = 10 50 A V V GS T 2 V ID L VG Si VDSSAT=0.2V entonces W/L=5 where Kn=100 A/V2 4 Analog Circuit Design

  5. INEL 5265 Review I 3/18/2025 Transistor Design #2 Design the transistor s W/L such that it operates in the saturation region for ID=10 A and VD = [0.5 - 3.1] V. C W ( ) VDD p OX 2 = | | I V V DS SG T 2 L W ( )2 A VG = 10 50 | | A V V ID SG T 2 V L VD Si VDSSAT min=3.3-3.1=0.2V Entonces W/L=5 where Kp=100 A/V2 VDD=3.3V 5 Analog Circuit Design

  6. INEL 5265 Review I 3/18/2025 Transistor Design #3 Design the transistor s W/L such that it operates in the saturation region for ID=[0.1 10] A and VX(max)=1.2V. This connection is a diode connection and ensures saturation C 2 W ( ) 2 ID n OX = I V V DS GS T L VX W ( 2 . 1 ) A 2 = 10 50 7 . 0 A 2 V L W ( 5 . 0 ) A 2 = 10 50 A V 2 V L where W Kn=100 A/V2 Vt0=0.7V = 4 / 5 L 6 Analog Circuit Design

  7. INEL 5265 Review I 3/18/2025 Common Source Amplifier VDD VDD ID VB Ibias M2 Vout Vout M1 M1 Vin Vin Simplified Schematic Implementation VGS 7 Analog Circuit Design

  8. INEL 5265 Review I 3/18/2025 Common Source Amplifier Typical design approach: 1. Id set by power constraints 2. Vds1(sat) & Vds2(sat) set by output voltage range constraints if any hence (W/L)1 & (W/L)2 3. (W/L)1 set by gain constraints (there might be a need for redesign M1) VDD Large Signal Behavior Vout(min) VDSSAT Typically VDSSAT 0.2V VB M2 Vout(max) VDD-VSDSAT Typically VSDSAT 0.2V Vout Small Signal Behavior Av -gmRout : where Rout=ro2||ro1 M1 Vin 8 Analog Circuit Design

  9. INEL 5265 Review I 3/18/2025 Common Source Amplifier Design the following CS amplifier for the following specifications: Vout = [0.15 2.7] V Psupply < 90 W |Av| > 30 V/V where VT0n=|VT0p|=1.0V K n=100 A/V2 K p=25 A/V2 n= p =0.2V-1 VDD=3.0V VDD VDD = A g R v m OUT V 15 = 3 . 0 V M1 Vin SDSAT Iref =10 A = . 0 V V DSSAT P supply Vout ( )DD V = + I I D ref M3 M2 9 Analog Circuit Design

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