Learn about the treatment of quaternary materials in semiconductor nanodevice simulations, including material parameters needed for GaAs/AlGaAs heterostructures and interpolation techniques for ternaries. Explore the complexities of AlxGa1-xAsyP1-y and AlxGa1-xIn1-x-yAs quaternaries, along with the

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Research at the HERACLES facility focuses on electron beam generation and cathode development for high-current applications. Photocathodes play a crucial role in providing low energy spread beams required for processes like FEL-lasing. GaAs emerges as a promising candidate for spin-polarized electro

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This research delves into the alteration of GaAs emission through the integration of PbS quantum dots, emphasizing the optical properties and absorption edge engineering. The unique characteristics of PbS and GaAs make them ideal candidates for enhancing optical fibers and optoelectronic devices. Th

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Examining the impact of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes. Ion back-bombardment in photo-gun setups is a significant factor limiting the operating lifetime of photocathodes. Investigation includes H-ions implantation into GaAs, experimental apparatus d

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